Current Issue : July-September Volume : 2022 Issue Number : 3 Articles : 5 Articles
In this review paper, an overview of the application of n‐type 4H‐SiC Schottky barrier diodes (SBDs) as radiation detectors is given. We have chosen 4H‐SiC SBDs among other semiconductor devices such as PiN diodes or metal‐oxide‐semiconductor (MOS) structures, as significant progress has been achieved in radiation detection applications of SBDs in the last decade. Here, we present the recent advances at all key stages in the application of 4H‐SiC SBDs as radiation detectors, namely: SBDs fabrication, electrical characterization of SBDs, and their radiation response. The main achievements are highlighted, and the main challenges are discussed....
A new kind of temperature sensor based on a vacuum diode was proposed and numerically studied in this paper. This device operated under different electron emission mechanisms according to the electron density in the vacuum channel. The temperature determination ability of this device was only empowered when working in the electric-field-assisted thermionic emission regime (barrierlowering effect). The simulated results indicated that the temperature-sensing range of this device was around 273 K–325 K with a supply current of 1 μA. To obtain a linear dependency of voltage on temperature, we designed a proportional-to-absolute-temperature (PTAT) circuit. The mathematic derivation of the PTAT voltage is presented in this study. The temperature-sensing sensitivity was calculated as 7.6 mV/K according to the measured I-U (current versus voltage) characteristic. The structure and principle of the device presented in this paper might provide an alternative method for the study of temperature sensors....
The integration of a scan drive circuit is required for flexible and stretchable displays because a rigid scan driver IC is not flexible and stretchable. In this study, decoder-type scan drivers were developed using amorphous IGZO thin-film transistors for both depletion and enhancement mode TFTs. Simulations and measurements show that the proposed decoder-type scan driver operates well for both the enhancement and depletion-mode TFTs without error. The measurement results show that the proposed circuit provides scan pulses well, even with depletion-mode TFTs with a large negative threshold voltage of around −25 V....
In this present work, different Cross-Coupled Differential Drive (CCDD) CMOS bridge rectifiers are designed using either 32 nm or Tunnel-FET (TFET) technology. Commercial PDK has been used for the 32 nm technology, while lookup tables (LUT) resulting from a physics model have been applied for the TFET. To consider the parasitic effects for the circuit performances, the 32 nm-based circuits have been laid out, while a parasitic model has been included in the TFET LUT for circuit implementation. In this work, the post-layout simulations, including parasitic, demonstrate for conventional CCDD circuits that TFET technology has a larger dynamic range (DR) (>60%) and better 1 V-sensitivity than the 32 nm planar technology has. Note that, in this case, the figure of merit defined by the Voltage Conversion Efficiency (VCE) and Power Conversion Efficiency (PCE) remains somewhat similar. On the other hand, topology proposing better VCE at the cost of low PCE shows lower performance than expected in 32 nm than in reported data for larger technology nodes (e.g., 180 nm). The TFET-based circuit shows a PCE of 70%, VCE of 82% with an 8 dB DR (>60%), and the best 1 V-sensitivity in this work. Because of the low-bias condition and the good reverse current blocking (unidirectional channel), the TFET offers new perspectives for RF-DC rectifier/multiplier topology, which are usually limited with planar technology....
A highly power‐efficient, fully differential Miller op‐amp with accurately controlled output quiescent current is introduced. The op‐amp can drive both capacitive and resistive load due to the presence of the auxiliary amplifier. This amplifier helps to achieve class AB operation of the proposed op‐amp. The fully differential auxiliary amplifier is compact and uses a resistive local common‐mode feedback network. It consumes only 6% of the total current of the op‐amp. The proposed op‐amp has several innovative features. Incorporating the auxiliary amplifier helps to improve the unity gain frequency, power efficiency, slew‐rate, and common‐mode rejection ratio of the proposed op‐amp. It can drive a wide range of resistive (200 Ω–1 MΩ) and capacitive loads (5 pF–300 pF). The op‐amp has a large signal dynamic current efficiency of 8.6 and a large signal static current efficiency of 7.9. The small‐signal figure of merit is 8.7 for RL = 1 MΩ and 7.3 for RL = 200 Ω....
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